mmbf2201nt1 these miniature surface mount mosfets low r ds(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. typical applications are dc?dc converters, power man agement in portable and battery?powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life ? miniature sc?70/sot?323 surface mount package saves board space ? pb?free package is available maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss 20 vdc gate?to?source voltage ? continuous v gs 20 vdc drain current ? continuous @ t a = 25 c ? continuous @ t a = 70 c ? pulsed drain current (t p 10 s) i d i d i dm 300 240 750 madc total power dissipation @ t a = 25 c (note 1) derate above 25 c p d 150 1.2 mw mw/ c operating and storage temperature range t j , t stg ? 55 to 150 c thermal resistance, junction?to?ambient r ja 833 c/w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. mounted on g10/fr4 glass epoxy board using minimum recommended footprint. 3 1 2 n?channel 300 mamps, 20 volts r ds(on) = 1 device package shipping ? ordering information mmbf2201nt1 sc?70/ sot?323 3000 tape & ree l sc?70/sot?323 case 419 style 8 marking diagram and pin assignment n1 = device code m = date code* = pb?free package *date code orientation may vary depending upon manufacturing location. (note: microdot may be in either location) MMBF2201NT1G sc?70/ sot?323 (pb?free) 3000 tape & ree l 1 gate 3 drain 2 source 2 3 1 n1 m product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (v gs = 0 vdc, i d = 10 a) v (br)dss 20 ? ? vdc zero gate voltage drain current (v ds = 16 vdc, v gs = 0 vdc) (v ds = 16 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? 1.0 10 adc gate?body leakage current (v gs = 20 vdc, v ds = 0) i gss ? ? 100 nadc on characteristics (note 2) gate threshold voltage (v ds = v gs , i d = 250 adc) v gs(th) 1.0 1.7 2.4 vdc static drain?to?source on?resistance (v gs = 10 vdc, i d = 300 madc) (v gs = 4.5 vdc, i d = 100 madc) r ds(on) ? ? 0.75 1.0 1.0 1.4 forward transconductance (v ds = 10 vdc, i d = 200 madc) g fs ? 450 ? mmhos dynamic characteristics input capacitance (v ds = 5.0 v) c iss ? 45 ? pf output capacitance (v ds = 5.0 v) c oss ? 25 ? transfer capacitance (v dg = 5.0 v) c rss ? 5.0 ? switching characteristics (note 3) turn?on delay time (v dd = 15 vdc, i d = 300 madc, r l = 50 ) t d(on) ? 2.5 ? ns rise time t r ? 2.5 ? turn?off delay time t d(off) ? 15 ? fall time t f ? 0.8 ? gate charge (see figure 5) q t ? 1400 ? pc source?drain diode characteristics continuous current i s ? ? 0.3 a pulsed current i sm ? ? 0.75 forward voltage (note 3) v sd ? 0.85 ? v 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperature. mmbf2201nt1 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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